Home · [2023 대한전자공학회 하계학술대회] A Compact Model for Transient Program Operation of Barrier Engineered Charge-Trapping NAND Flash Memories
Home · [2023 대한전자공학회 하계학술대회] A Compact Model for Transient Program Operation of Barrier Engineered Charge-Trapping NAND Flash Memories
[2023 대한전자공학회 하계학술대회] A Compact Model for Transient Program Operation of Barrier Engineered Charge-Trapping NAND Flash Memories
기간
2023
참가자
Haechan Choi and Hyungcheol Shin
대회명
대한전자공학회 추계학술대회
Haechan Choi and Hyungcheol Shin, “A Compact Model for Transient Program Operation of Barrier Engineered Charge-Trapping NAND Flash Memories,” 대한전자공학회 하계학술대회, 2023.