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Home · [2024 EDTM] A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memories
Home · [2024 EDTM] A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memories

[2024 EDTM] A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memories

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Haechan Choi, Hyungcheol Shin , “A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memories” , IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024

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