Insang Han, Sangmin Ahn, and Hyungcheol Shin, “Investigation of Grain Boundary Effect on Threshold Voltage and ISPP Slope in 3D NAND Flash Memories,” Korea Conference on Semiconductor (KCS), 2024.
기간
2024
참가자
Insang Han, Sangmin Ahn, and Hyungcheol Shin
대회명
Korean Conference on Semiconductors
Insang Han, Sangmin Ahn, and Hyungcheol Shin, “Investigation of Grain Boundary Effect on Threshold Voltage and ISPP Slope in 3D NAND Flash Memories,” Korea Conference on Semiconductor (KCS), 2024.