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Device degradation model for stacked-ONO gate structure with using SONOS and MOS transistors

기간

Apr. 2005

참가자

Jeong-Hyong Yi, Jin-Hong Ahn, Hyungcheol Shin, Young June Park, Hong Shick Min

대회명

IEEE International Reliability Physics Symposium

Jeong-Hyong Yi, Jin-Hong Ahn, Hyungcheol Shin, Young June Park, Hong Shick Min, “Device degradation model for stacked-ONO gate structure with using SONOS and MOS transistors,” “, IEEE International Reliability Physics Symposium, , pp.604-605, Apr. 2005