Home · Accurate extraction of ΔI / I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode
Home · Accurate extraction of ΔI / I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode
Accurate extraction of ΔI / I due to random telegraph noise in gate edge current of high-k n-type metal-oxide-semiconductor field-effect transistors under accumulation mode
저자
Ju-Wan Lee, Chan Hyeong Park, Hyungcheol Shin, Byung-Gook Park, and Jong-Ho Lee
