바로가기 메뉴
본문 바로가기
푸터 바로가기
TOP

 

Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor

저자

Jangkyu Lee, Changbeom Woo, Jongsu Kim, Myounggon Kang, Jongwook Jeon, and Hyungcheol Shin

저널 정보

Journal of Nanoscience and Nanotechnology

출간연도

2019

Abstract:

We investigate the interrelation between some variations and the stability of Negative Capacitance Field-Effect Transistors (NC FETs). When a variation effect is considered, stability issues which are making hysteretic operation should be considered for NC FETs as well. In this paper, to make sure of stability and hysteresis-free operation, a thickness margin of ferroelectric layer is suggested. It is the easiest solution for designing and surest method of vouching for hysteresis-free operation. Although some disadvantages which make subthreshold swing (SS) a bit higher than without a margin on thickness of ferroelectric layer (T FE) can be caused, both still high performance and stable operation can be achieved.