Abstract:
In this paper, we investigate the impact of geometry parameters such as ferroelectric layer thickness (T FE), extension length (L Ext), overlap length (L ov) on negative capacitance FET (NCFET). The NCFET is designed using HfZrO2 (HZO) ferroelectric materials and the Nanoplate FET (NPFET) presented as a next generation device. We use the 3-D TCAD Sentaurus simulator to analyze characteristics of the NCFET. The NCFET designed considering the stable condition overcomes the Boltzmann limit (i.e., the physical limit in the S.S., which is 60 mV/decade at 300 K) through the steep subthreshold swing (S.S.) and exhibits negative Drain-induced barrier lowering (DIBL) phenomenon. When examining the characteristics of NPFET and NCFET according to L Ext and L ov, the NCFET exhibits gate capacitance (C gg) tendency opposite to that of the NPFET. The NCFET with the scaled VDD has a significant advantage over the gate delay (τ d). The NCFET has better performance in environments where conventional device is more vulnerable to short channel effects (SCEs).