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Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory
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Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory
Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory
저자
Dongchan Lee and Hyungcheol Shin
저널 정보
IEICE Electronics Express
출간연도
2021
링크
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Transient program operation model considering distribution of electrons in 3D NAND flash memories
다음
Study on self-heating effect and lifetime in vertical-channel field effect transistor
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