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Transient program operation model considering distribution of electrons in 3D NAND flash memories
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Transient program operation model considering distribution of electrons in 3D NAND flash memories
Transient program operation model considering distribution of electrons in 3D NAND flash memories
저자
Dongchan Lee and Hyungcheol Shin
저널 정보
IEICE Electronics Express
출간연도
2020
링크
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이전
Comparative Analysis of Hot Carrier Degradation (HCD) in 10-nm Node nMOS/pMOS FinFET Devices
다음
Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory
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