JOURNAL

A long short-term memory neural network-based approach for retention lifespan prediction in 3D NAND flash memory

Eunseok Oh and Hyungcheol Shin

2026

Japanese Journal of Applied Physics (JEDS)

Impact of Elliptical Cell Geometry and Program Voltage on RTN-Induced Threshold Voltage Shift in 3-D NAND Flash

Eunseok Oh and Hyungcheol Shin

2025

IEEE Transactions on Electron Devices (TED)

Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

Hwanheechan Choi, Hyungjun Jo, Sangmin Ahn, Insang Han, and Hyungcheol Shin

2025

Journal of Computational Electronics (JCE)

A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

Jinil Yoo, Haechan Choi and Hyungcheol Shin

2025

Journal of Computational Electronics (JCE)

Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution

Jooyoung Lee, Jinil Yoo, Hyungcheol Shin

2025

Solid-State Electronics

Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

Myung Jin, Hyungcheol Shin

2025

IEEE Transactions on Electron Devices (TED)