JOURNAL

Machine Learning-Based Prediction of Threshold Voltage Distribution Due to Lateral Migration in 3-D NAND Flash Memory

Insang Han, Jang Kyu Lee, Sangmin Ahn, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices

Prediction of Random Telegraph Noise-induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

Eunseok Oh, Hyungcheol Shin

2024

IEEE Journal of the Electron Devices Society

A New Semi-Analytical Model for Erase Transients of 3-D Gate-All-Around (GAA) NAND Flash Memories

Jinil Yoo, Haechan Choi, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations

Jinil Yoo, Hyungjun Jo, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

Sungju Kim, Sangmin Ahn, Sechun Park, Jongwoo Kim, Hyungcheol Shin

2024

IEEE Journal of the Electron Devices Society

A more practical indicator of MAC operational power efficiency inside memory-based synapse array

Seongjae Cho, Sung-Tae Lee, Soomin Kim, Hyungcheol Shin

2024

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE