JOURNAL

A New Semi-Analytical Model for Erase Transients of 3-D Gate-All-Around (GAA) NAND Flash Memories

Jinil Yoo, Haechan Choi, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Time Constant Analysis of Lateral Charge Loss in 3-D NAND Flash Memories Through Multiscale Simulations

Jinil Yoo, Hyungjun Jo, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

Sungju Kim, Sangmin Ahn, Sechun Park, Jongwoo Kim, Hyungcheol Shin

2024

IEEE Journal of the Electron Devices Society

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

Haechan Choi, Jinil Yoo, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Investigation of Endurance Characteristics in 3-D nand Flash Memory With Trap Profile Analysis

Hyungjun Jo, Jongwoo Kim, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs

Juhyun Kim and Hyungcheol Shin

2023

IEEE Transactions on Electron Devices(TED)