JOURNAL

Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

Hwanheechan Choi, Hyungjun Jo, Sangmin Ahn, Insang Han, and Hyungcheol Shin

2025

Journal of Computational Electronics (JCE)

A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

Jinil Yoo, Haechan Choi and Hyungcheol Shin

2025

Journal of Computational Electronics (JCE)

Quantitative analysis on z-interference using reprogram scheme in 3D NAND flash memory Vth distribution

Jooyoung Lee, Jinil Yoo, Hyungcheol Shin

2025

Solid-State Electronics

Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

Myung Jin, Hyungcheol Shin

2025

IEEE Transactions on Electron Devices (TED)

A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memory in the FN-Tunneling Regime

Haechan Choi, Hyungcheol Shin

2025

IEEE Journal of the Electron Devices Society (JEDS)

An advanced scheme to match electric field between program verify and read operation in 3D NAND flash memory

Jaeyeop Jung, Sungju Kim, Sechun Park, Sung-Hyun Hwang, Donghun Kwak, Hyungcheol Shin

2025

Japanese Journal of Applied Physics (JJAP)