In this study, a nonvolatile memory (NVM) device of novel structure in three-dimension is introduced and validated. It is based on a pillar structure where two memory nodes commonly reside. The storage nodes are controlled by a single control gate so that spaces between silicon pillars can be reduced, in which additional gates called cutoff gates realize perfect operations. Gated twin-bit (GTB) NVM device is considered as the ultimate form of 3-D NVM device based on double-gate structure in a sense that the use of common gate makes maximal integration possible. The operation schemes and fabrication method of the GTB NVM device are also introduced.