A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

Home · A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

저자

Jinil Yoo, Haechan Choi and Hyungcheol Shin

저널 정보

Journal of Computational Electronics (JCE)

출간연도

2025

링크