Abstract: 

Random telegraph noise RTN in the gate edge current under accumulation mode is studied in high-k gate dielectric n-type metal-oxide-semiconductor field-effect transistors nMOSFETs. The RTN in the gate edge current is originated by a trap which exists in the gate dielectric between the gate and the drain or source. The gate edge current is separated from the total gate tunneling current. The gate edge and the gate-induced drain leakage currents are also separated from the source or drain current. Accurate ΔI/I in the gate edge currents is extracted by separating the gate edge current from the total gate current. We propose a schematic model based on accurate ΔI/I, elucidating the generation of the RTN in the gate edge current.