An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory

Home · An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory

저자

Sangmin Ahn, Hyungjun Jo, Sungju Kim, Sechun Park, Kyunam Lim, Jongwoo Kim and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2023

링크