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Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

저자

Ju-Wan Lee, Hyungcheol Shin, and Jong-Ho Lee

저널 정보

Applied Physics Letters

출간연도

2010

Abstract: 

Random telegraph noise in gate induced drain leakage current of nanoscale n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was observed and analyzed for the first time. Capture and emission probability of carrier was analyzed in terms of gate voltage and temperature. The emission times (tau_e) in n and pMOSFETs have no dependence on VGS but are strongly dependent on temperature since the e is decreased more significantly with increasing temperature than the capture time (tau_c) in n and pMOSFETs. As VGS increases, the (tau_c) in n and pMOSFETs decreases.