This paper presents an analysis of traps causing random telegraph noise (RTN) in trap-assisted tunneling (TAT) gate-induced drain leakage (GIDL) current. RTN was shown for the first time to occur as a result of electron trapping rather than hole trapping. In addition, the proper effective permittivity of two different materials is used to accurately determine the distance between two traps causing RTN in TAT GIDL in an oxide.