In this research, a compact model is proposed for trap-assisted tunneling (TAT) currents in 3-D NAND flash memory during erase/write (EW) cycling. Using the trap spectroscopy by charge injection and sensing (TSCIS) technique, the average trap density and trap energy level are extracted and applied in the TAT model. The compact model integrates band-to-trap tunneling (BT), trap-to-band tunneling (TB), and trap-to-trap tunneling (TTT) mechanisms. In BT and TTT, tunneling to trap occurs only when the trap energy level is aligned with or below the injection level. Modified tunneling equations are used to address misaligned trap energy levels in TTT. The compact model demonstrates good agreement with measurement data across various word-line (WL) voltages and cycling conditions.