To satisfy requirements especially for future devices, studies of Nanowire FET (NWFET) and FinFET is highly motivated in many groups. This is because NWFET and FinFET have strong gate controllability, allowing them to maintain great performance compared with that of conventional planar MOSFETs. Therefore, the limiting factors affecting the performance and/or reliability for each device should be considered carefully. In this work, our group chose various perspectives to evaluate FinFET and NWFET in technology nodes. The results from the selected factors according to technology nodes were analyzed by TCAD simulation. By observing the simulation results versus the technology node, a guideline for proper device properties according to the technology node was proposed. Our group found that the NWFET as a future device has advantages in terms of performance. However, it is found that FinFET can be more advantageous than NWFET in terms of reliability.