The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time (τ _e ) and capture time (τ _c ) in the channel current have a dependence on V _GS . However, τ _e in the GIDL current is independent of V _GS but strongly dependent on the temperature since τ _e is decreased more significantly with increasing temperature than τ _c . As V _GS increases, τ _c in the GIDL current increases.