The low-frequency noise (LFN) Characteristics of bipolar switching devices consisting of Pt (top)/Al/Pr_0.7Ca_0.3MnO₃ (PCMO)/Pt (bottom) were investigated. The noise spectral density in a low frequency range showed a classical 1/f dependence in both high-resistance state (HRS) and low-resistance state (LRS). The random telegraph noise (RTN) were observed in both HRS and LRS which is due to the AlO_x layer acting as traps at the interface between Al and PCMO or traps in PCMO bulk layer. The voltage dependence of the normalized low-frequency spectral density of current fluctuations (S_i/I²) presents that the noise properties can be useful indicators to explain the switching mechanism of Al/PCMO device but new noise models should be suggested for the clear approach to analysis of the conduction characteristics in the devices.