As device size shrinks smaller, not only random telegraph signal (RTS) noise, which is caused by the trapping and de-trapping of a single carrier but also the degradation of gate oxide due to hot-carrier stress become a serious issue. In this paper, random telegraph signal (RTS) measurements have been used to study individual hot-carrier-induced traps in n-type metal oxide semiconductor field effect transistor (nMOSFETs). Trap depth (x_T), lateral location (y_T), and trap energy (E_Cox–E_T) of stress-induced traps are founded to be different from those of process-induced traps. Also, we confirmed the hot-carrier stress induced traps are located near drain region.