Home · Fabrication and characteristics of P-channel silicon-oxide-nitride-oxidesilicon flash memory device based on bulk fin shaped field effect transistor structure
Home · Fabrication and characteristics of P-channel silicon-oxide-nitride-oxidesilicon flash memory device based on bulk fin shaped field effect transistor structure
Fabrication and characteristics of P-channel silicon-oxide-nitride-oxidesilicon flash memory device based on bulk fin shaped field effect transistor structure
저자
Il Hwan Cho, Tai-Su Park, Jeong Dong Choe, Hye Jin Cho, Donggun Park, Hyungcheol Shin, Byung-Gook Park, Jong Duk Lee, and Jong-Ho Lee
