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Impact of Elliptical Cell Geometry and Program Voltage on RTN-Induced Threshold Voltage Shift in 3-D NAND Flash
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Impact of Elliptical Cell Geometry and Program Voltage on RTN-Induced Threshold Voltage Shift in 3-D NAND Flash
Impact of Elliptical Cell Geometry and Program Voltage on RTN-Induced Threshold Voltage Shift in 3-D NAND Flash
저자
Eunseok Oh and Hyungcheol Shin
저널 정보
IEEE Transactions on Electron Devices (TED)
출간연도
2025
링크
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이전
Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory
다음
A long short-term memory neural network-based approach for retention lifespan prediction in 3D NAND flash memory
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