Home · Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
Home · Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
저자
Dae Woong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Dongwon Chang, Hyukje Kwon, Wonseong Lee, Il Han Park, Junsoo Kim, Lee Jaehong, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin
저널 정보
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Rev