Fin silicon–oxide–nitride–oxide–semiconductor (SONOS) Flash memories having independent double gates are fabricated and characterized. This device has two sidewall gates sharing one Si fin. To achieve narrow Si fin width over the photolithography limitation, sidewall spacer patterning is adopted. Specific fabrication processes for the fin SONOS Flash memory having independent double gates are described. Electrical properties related to the opposite gate dependence are characterized. Measurement results of the paired cell interference are delivered.