Investigation and Modeling of Z-Interference in Poly-Si Channel-Based 3-D NAND Flash Memories

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Home · Investigation and Modeling of Z-Interference in Poly-Si Channel-Based 3-D NAND Flash Memories

저자

Hyungjun Jo, Sangmin Ahn, and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2022

링크