Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide

Home · Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide

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Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, and Hyungcheol Shin

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IEICE Electronics Express

출간연도

2022

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