Investigation of Gate Sidewall Spacer Optimization From OFF-State Leakage Current Perspective in 3-nm Node Device

Home · Investigation of Gate Sidewall Spacer Optimization From OFF-State Leakage Current Perspective in 3-nm Node Device

저자

Donghyun Ryu, Ilho Myeong, Jangkyu Lee, Myounggon Kang, Jongwook Jeon and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2019

링크