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Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory
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Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory
Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory
저자
Jooyoung Lee and Hyungcheol Shin
저널 정보
Journal of Computational Electronics (JCE)
출간연도
2026
링크
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Strategies to Improve Efficiency of Select-Gate Voltage Floating During GIDL-Assisted Erase in 3-D NAND Flash Memory
다음
Developing an ultimate 3D NAND flash memory simulation environment for operation and optimization
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