Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory

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저자

Wandong Kim, Dae Woong Kwon, Junghwan Ji, Jung Hoon Lee, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park

저널 정보

Japanese Journal of Applied Physics: Regular Papers

출간연도

2011

링크