Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

Home · Machine learning-based prediction of the impact of random grain boundary Z-interference on Vt distribution in 3-D NAND flash memory

저자

Hwanheechan Choi, Hyungjun Jo, Sangmin Ahn, Insang Han, and Hyungcheol Shin

저널 정보

Journal of Computational Electronics (JCE)

출간연도

2025

링크