Machine Learning-Based Prediction of Threshold Voltage Distribution Due to Lateral Migration in 3-D NAND Flash Memory

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Home · Machine Learning-Based Prediction of Threshold Voltage Distribution Due to Lateral Migration in 3-D NAND Flash Memory

저자

Insang Han, Jang Kyu Lee, Sangmin Ahn, Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices

출간연도

2024

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