Accurate modeling and analytical parameter extraction of the non-quasi-static small-signal model of FinFETs are presented using a three-dimensional device simulator. Using simple Y- and Z-matrices calculations, the extrinsic gate-to-drain/source capacitance and source/drain resistance are de-embedded from the small-signal equivalent circuit. The analytical parameter extractions are performed by Y-parameter analysis after removing the extrinsic gate-to-drain/source capacitance and source/drain resistance. Accuracy of the model and extraction method is verified with the device-simulation data up to 700 GHz. Without any complex fitting and optimization steps, the total modeling rms error of the Y-parameter up to 700 GHz was calculated to be only 1.9 % in the saturation region and 2.1 % in the linear region. Also, the bias dependencies of the small-signal parameters are presented.