Polarity-dependent device degradation in SONOS transistors due to gate conduction under nonvolatile memory operations

Home · Polarity-dependent device degradation in SONOS transistors due to gate conduction under nonvolatile memory operations

저자

Jeong Hyong Yi, Hyung cheol Shin, Young June Park, Hong Shick Min

저널 정보

IEEE transactions on device and materials reliability

출간연도

2006

링크