Abstract:

In this paper, we propose a simple wide-band metal-insulator-metal (MIM) capacitor model incorporating the skin effect in the gigahertz regions. The proposed model accurately describes the frequency-dependent series resistance over a wide range of frequencies and hence enables the quality factor of the MIM capacitor to be predicted with high accuracy in the multi-GHz frequency regime. Since the proposed model consists of frequency-independent lumped elements, it can be easily implemented in simulation program with integrated circuit emphasis (SPICE)-compatible simulators. We also demonstrate the scalability of the proposed model for different device geometries. In addition, we present the characterized results for MIM capacitors under various substrate conditions including different shield materials.