바로가기 메뉴
본문 바로가기
푸터 바로가기
TOP

 

Study on Time Constants of Random Telegraph Noise in Gate Leakage Current Through Hot-Carrier Stress Test

저자

Heung-Jae Cho, Younghwan Son, Byoungchan Oh, Sanghoon Lee, Jong-Ho Lee, Byung-Gook Park, and Hyungcheol Shin

저널 정보

IEEE Electron Device Letters (EDL)

출간연도

2010

Abstract:

Capture and emission time constants obtained from random telegraph noise in gate leakage current ( Ig RTN) are studied by characterizing an intentionally created trap in thin gate oxide (2.6 nm) in metal-oxide-semiconductor field-effect transistors (MOSFETs). The single oxide trap was generated at the drain edge region in virgin nMOSFETs by drain-avalanche hot-carrier stress. By analyzing the location and energy level of the trap extracted from the experimental data, the time constants of high and low current levels in Ig RTN were found to be capture and emission times, respectively.