Capture and emission time constants obtained from random telegraph noise in gate leakage current ( Ig RTN) are studied by characterizing an intentionally created trap in thin gate oxide (2.6 nm) in metal-oxide-semiconductor field-effect transistors (MOSFETs). The single oxide trap was generated at the drain edge region in virgin nMOSFETs by drain-avalanche hot-carrier stress. By analyzing the location and energy level of the trap extracted from the experimental data, the time constants of high and low current levels in Ig RTN were found to be capture and emission times, respectively.