The influence of deuterium annealing on the evolution of interface trap capture cross sections under channel-hot-electron and Fowler-Nordheim stresses was investigated. We found that the amount of the variation in the capture cross section was reduced by deuterium annealing under both electrical stresses. Possible mechanisms of this phenomenon were discussed, and the improved reliability of transition SiO{sub x} layer (x : 0 – 2) near the interface by deuterium annealing was thought to be the major reason for our observations.