Abstract: 

We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its fabrication method is proposed.