A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memory in the FN-Tunneling Regime

Home · A Compact Model for Program Operation of Gate-All-Around Barrier-Engineered Charge-Trapping NAND Flash Memory in the FN-Tunneling Regime

저자

Haechan Choi, Hyungcheol Shin

저널 정보

IEEE Journal of the Electron Devices Society (JEDS)

출간연도

2025

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