바로가기 메뉴
본문 바로가기
푸터 바로가기

서울대학교 DRL

사이트맵
TOP

 

Home · Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory
Home · Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

저자

Myung Jin, Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices (TED)

출간연도

2025

링크

목록 보기