A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

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Home · A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

저자

Haechan Choi, Jinil Yoo, Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2024

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