Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs

Home · Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs

저자

Hochul Lee, Youngchang Yoon, Seong-Jae Cho, and Hyungcheol Shin

저널 정보

IEICE Transactions on Electronics

출간연도

2007

링크