Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices

Home · Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices

저자

Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hun Lee, Jong Pil Kim, Jong Duk Lee, Hyungcheol Shin and Byung-Gook Park

저널 정보

IEICE Transactions on Electronics

출간연도

2007

링크