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Home · Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory
Home · Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory

Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory

저자

Shinkeun Kim and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2021

링크

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