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Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories
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Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories
Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories
저자
Sangmin Ahn and Hyungcheol Shin
저널 정보
IEICE Electronics Express
출간연도
2021
링크
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A Potential Model of Triple Macaroni Channel MOSFETs in Subthreshold Region
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Analysis of the Effect of Residual Holes on Lateral Migration During the Retention Operation in 3-D NAND Flash Memory
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