Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Home · Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

저자

Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Younghwan Son, Taewook Kang, Sunyoung Park, Seunghyun Jang, Jong-Ho Lee, and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2011

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