The current behaviors of fully depleted (FD) symmetric double-gate (DG) metal–oxide–semiconductor field effect transistors (MOSFETs) with doped short-channel were parametrically modeled with the simple closed-form in all operational regions. In the diffusion current model, a physical parameter D_G as a function of gate bias (V_GS), drain bias (V_DS), silicon body width (W_B), channel length (L), and channel doping concentration (N_b) was introduced to consider the V_GS dependence. Also, the subthreshold slope (SS) of DG MOSFETs with doped channel was modeled accurately with D_G. D_D which is dependent on V_DS was introduced to consider the drain-induced barrier lowering (DIBL) in the diffusion current model. After the strong inversion, the drift current of doped DG MOSFETs was modeled by considering inversion-layer capacitance based on charge-sheet approximation. The channel length modulation by V_DS was considered for accuracy in the current modeling of DG MOSFETs with doped short-channel. Our simple compact models predicted accurately DC characteristics of the devices with the channel length to 20 nm and shown good agreement with two-dimensional (2D) simulation.