Comparative Analysis of Hot Carrier Degradation (HCD) in 10-nm Node nMOS/pMOS FinFET Devices

TOP

Home · Comparative Analysis of Hot Carrier Degradation (HCD) in 10-nm Node nMOS/pMOS FinFET Devices

저자

Jongsu Kim, Kyushik Hong, Hyewon Shim, Hwqsung Rhee, and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2020

링크