Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET

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Home · Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET

저자

Quan Nguyen Gia, Sung-Won Yoo, Hyunseul Lee and Hyungcheol Shin

저널 정보

Solid-State Electronics

출간연도

2014

링크