The interface states have been one of the main reliability concerns for nano-scale metal oxide semiconductor field effect transistors (MOSFETs). Especially, the stress induced interface states generation is very important. For quantitatively clarify, the high-frequency charge pumping technique is presented and it has better accuracy and easier than former charge pumping method, which needs variable rise and fall times of gate pulse. Furthermore, it can reject border traps effect. Using the presented method, the energy distribution of interface states was extracted and the Fowler–Nordheim stress induced energy level of interface states was profiled in pure silicon dioxide and finely engineered remote plasma nitrided oxide. The technique is well suited for investigating the nano-scale MOSFET reliabilities.